1999. 12. 29
1/1
SEMICONDUCTOR
TECHNICAL DATA
BCW29/30
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Complementary to BCW31/32
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
* : Package Mounted On 99.9% Alumina 10 8 0.6mm.
Marking
Lot No.
C1
Type Name
Lot No.
C2
Type Name
BCW29
BCW30
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-30
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-100
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-65 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10 A
-30
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-2mA
-20
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10 A
-5
-
-
V
Collector Cut-off Current
I
CBO
V
CB
=-30V
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-5V
-
-
-100
nA
DC Current Gain
BCW29
h
FE
V
CE
=-5V, I
C
=-2mA
110
-
220
BCW30
200
-
450
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-10mA, I
B
=-0.5mA
-
-
-0.25
V
Base-Emitter On Voltage
V
BE(ON)
V
CE
=-5V, I
C
=-2mA
-0.55
-
-0.7
V
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
-
4
pF
Noise Figure
NF
V
CE
=-5V, I
C
=-0.2mA
R
S
=2k , f=1kHz
-
-
10
dB
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